On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired ...http://www.google.fr/patents/US5696008?utm_source=gb-gplus-shareBrevet US5696008 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
