A method for providing high density multiple level metallurgy for integrated circuit devices in which a relatively thin layer of plasma produced silicon nitride is deposited over a first level of interconnection metallurgy formed on a layer of silicon oxide. Overlap via holes are...http://www.google.fr/patents/US4423547?utm_source=gb-gplus-shareBrevet US4423547 - Method for forming dense multilevel interconnection metallurgy for semiconductor devices
Method for forming dense multilevel interconnection metallurgy for ...
