There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of...http://www.google.fr/patents/US7405115?utm_source=gb-gplus-shareBrevet US7405115 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
