A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low...http://www.google.fr/patents/US20030062627?utm_source=gb-gplus-shareBrevet US20030062627 - Damascene structure fabricated using a layer of silicon-based photoresist material
Damascene structure fabricated using a layer of silicon-based photoresist ...
Numéro de demande: 10/290,637 Numéro de publication: US 2003/0062627 A1 Date de dépôt: 8 nov. 2002 Brevet délivré: US6825562 ( Date de délivrance 30 nov. 2004)
