A non-critical block mask exposes one of the source and drain in an SOI FET, which is implanted with a leakage implant that increases the leakage in the exposed element, thus providing a conductive path to draw away holes from the transistor body....http://www.google.fr/patents/US6635542?utm_source=gb-gplus-shareBrevet US6635542 - Compact body for silicon-on-insulator transistors requiring no additional layout area
Compact body for silicon-on-insulator transistors requiring no additional ...
