A word current source (445) for a magnetoresistive random access memory circuit (420) includes an n-channel transistor (430) including a gate, a source and a drain, where the source is coupled to a supply ground, and the drain is coupled to the magnetoresistive random access memory circuit. A positive...http://www.google.fr/patents/US7054185?utm_source=gb-gplus-shareBrevet US7054185 - Optimized MRAM current sources
