Disclosed is a method for forming a polysilicon plug of a semiconductor device. The method comprises the steps of: forming a stacked pattern of a wordline and a hard mask film on a semiconductor substrate comprising a cell region and a peripheral circuit region; forming a spacer on a sidewall of the...http://www.google.fr/patents/US7119015?utm_source=gb-gplus-shareBrevet US7119015 - Method for forming polysilicon plug of semiconductor device
Method for forming polysilicon plug of semiconductor device
