A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si...http://www.google.fr/patents/US6512252?utm_source=gb-gplus-shareBrevet US6512252 - Semiconductor device
