A heterojunction bipolar transistor (30) in a silicon-on-insulator (SOI) structure is disclosed. The transistor collector (28), heterojunction base region (20), and intrinsic emitter region (25) are formed in the thin film silicon layer (6) overlying the buried insulator layer (4). A base electrode (10)...http://www.google.fr/patents/US6794237?utm_source=gb-gplus-shareBrevet US6794237 - Lateral heterojunction bipolar transistor
