The present invention is an apparatus and method for semi-selectively depositing a material on a substrate by chemical vapor deposition to form continuous, void-free contact holes or vias in sub-half micron applications. An insulating layer is preferentially deposited on the field of a substrate to delay...http://www.google.fr/patents/US6430458?utm_source=gb-gplus-shareBrevet US6430458 - Semi-selective chemical vapor deposition
