A high voltage transistor exhibiting high gated diode breakdown voltage, low leakage and low body effect is forced while avoiding an excessive number of costly masking steps. Embodiments include providing a high gated diode breakdown voltage by masking the high voltage junctions from the conventional...http://www.google.fr/patents/US6143612?utm_source=gb-gplus-shareBrevet US6143612 - High voltage transistor with high gated diode breakdown, low body effect and low leakage
High voltage transistor with high gated diode breakdown, low body effect and ...
