A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor...http://www.google.fr/patents/US7064418?utm_source=gb-gplus-shareBrevet US7064418 - Method and structure of diode
