An improved method for use in fabricating individual semiconductor radiation detectors on a chip is characterized by forming generally V-shaped grooves converging toward one another from opposite sides of the chip into the thickness dimension thereof. The grooves meet within the chip and serve to separate...http://www.google.fr/patents/US4312115?utm_source=gb-gplus-shareBrevet US4312115 - Process to obtain multielement linear bidimensional infrared detectors having improved exactness of geometry and high degree of integration
Process to obtain multielement linear bidimensional infrared detectors ...
