A manufacturing method of a double LDD MOS transistor includes forming a gate electrode on a semiconductor substrate; forming a first LDD area by implanting and thermally annealing impurity ions using the gate electrode as a mask; forming a first spacer on both lateral walls of the gate electrode; forming...http://www.google.fr/patents/US7449387?utm_source=gb-gplus-shareBrevet US7449387 - MOS transistor and method of manufacturing the same
MOS transistor and method of manufacturing the same
