A method and apparatus of forming local interconnects in a MOS process deposits a layer of polysilicon over an entire region after several conventional MOS processing steps. The region is then masked to provide protected regions and unprotected regions. The mask may be used to define local...http://www.google.fr/patents/US5780347?utm_source=gb-gplus-shareBrevet US5780347 - Method of forming polysilicon local interconnects
