Electronic grade aluminum nitride semiconductor material may be uniformly nucleated and epitaxially formed on an aluminum oxide substrate by reacting aluminum oxide or aluminum nitride with nitrogen in the presence of carbon....http://www.google.fr/patents/US4152182?utm_source=gb-gplus-shareBrevet US4152182 - Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
Process for producing electronic grade aluminum nitride films utilizing the ...
