A method of manufacturing a memory device including forming an electrode over a substrate, then forming a dielectric feature proximate a contact region of a sidewall of the electrode, and then forming a phase change feature proximate the contact region. ...http://www.google.fr/patents/US20060148229?utm_source=gb-gplus-shareBrevet US20060148229 - Phase change memory device and method of manufacturing
Phase change memory device and method of manufacturing
Numéro de demande: 11/028,841 Numéro de publication: US 2006/0148229 A1 Date de dépôt: 4 janv. 2005 Brevet délivré: US7265373 ( Date de délivrance 4 sept. 2007)
