Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the...http://www.google.fr/patents/US7402837?utm_source=gb-gplus-shareBrevet US7402837 - Light emitting devices with self aligned ohmic contacts
Light emitting devices with self aligned ohmic contacts
