A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises...http://www.google.fr/patents/US7799665?utm_source=gb-gplus-shareBrevet US7799665 - Laser processing apparatus and laser processing process
Laser processing apparatus and laser processing process
