A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing...http://www.google.fr/patents/US5985741?utm_source=gb-gplus-shareBrevet US5985741 - Semiconductor device and method of fabricating the same
Semiconductor device and method of fabricating the same
