A seminconductor laser device includes a hetero-junction structure disposed in a groove in a semi-insulating semiconductor substrate having a first conductivity type first cladding layer, a quantum well active layer, and a first or second conductivity type or high resistance second cladding layer. First...http://www.google.fr/patents/US4937835?utm_source=gb-gplus-shareBrevet US4937835 - Semiconductor laser device and a method of producing same
Semiconductor laser device and a method of producing same
