Phase change memory devices and methods for fabricating the same. An exemplary phase change memory device includes a conductive element formed in a dielectric layer. A phase change material layer is formed in the dielectric layer. A conductive layer extends in the dielectric layer to respectively electrically...http://www.google.fr/patents/US7745811?utm_source=gb-gplus-shareBrevet US7745811 - Phase change memory devices and methods for fabricating the same
Phase change memory devices and methods for fabricating the same
