A method of forming an SRAM cell includes, a) providing a pair of pull-down gates having associated transistor diffusion regions operatively adjacent thereto, one of the diffusion regions of each pull-down gate being electrically connected to the other pull-down gate; b) providing a pair of pull-up resistor...http://www.google.fr/patents/US6242781?utm_source=gb-gplus-shareBrevet US6242781 - Resistor constructions
