The present invention provides, in a TFT, a gate electrode and a channel domain that are plurally divided in the channel-length direction, a low-concentration domain that is formed between the divided channel domains, and a low-concentration drain domain that adjoins a second channel domain located closest...http://www.google.fr/patents/US6580129?utm_source=gb-gplus-shareBrevet US6580129 - Thin-film transistor and its manufacturing method
