A semiconductor substrate is provided having an insulator thereon with a semiconductor layer on the insulator. A deep trench isolation is formed, introducing strain to the semiconductor layer. A gate dielectric and a gate are formed on the semiconductor layer. A spacer is formed around the gate, and...http://www.google.fr/patents/US7306997?utm_source=gb-gplus-shareBrevet US7306997 - Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor
Strained fully depleted silicon on insulator semiconductor device and ...
