Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A floating gate is separated from the channel...http://www.google.fr/patents/US20040004245?utm_source=gb-gplus-shareBrevet US20040004245 - Memory utilizing oxide-conductor nanolaminates
Numéro de demande: 10/191,336 Numéro de publication: US 2004/0004245 A1 Date de dépôt: 8 juil. 2002 Brevet délivré: US7221017 ( Date de délivrance 22 mai 2007)
