A vertical ferroelectric gate field-effect transistor (FeGFET) device comprises a substrate and a first drain/source electrode formed on an upper surface of the substrate. An electrically conductive channel region is formed on an upper surface of the first drain/source electrode and electrically contacting...http://www.google.fr/patents/US6744087?utm_source=gb-gplus-shareBrevet US6744087 - Non-volatile memory using ferroelectric gate field-effect transistors
Non-volatile memory using ferroelectric gate field-effect transistors
