The ROM device comprises a number of memory cells each is constructed based on a MOS transistor, the memory cells in the ROM are arranged into a number of rows and a columns. A number of word lines each connects to the gates of each of the MOS transistors of all the memory cells in each of the rows....http://www.google.fr/patents/US5620915?utm_source=gb-gplus-shareBrevet US5620915 - Method for bypassing null-code sections for read-only memory by access line control
Method for bypassing null-code sections for read-only memory by access line ...
