A structure for conducting carriers and method for forming is described incorporating a single crystal substrate of Si or SiGe having an upper surface in the <110> and a psuedomorphic or epitaxial layer of SiGe having a concentration of Ge different than the substrate whereby the psedomorphic layer is...http://www.google.fr/patents/US7187059?utm_source=gb-gplus-shareBrevet US7187059 - Compressive SiGe <110> growth and structure of MOSFET devices
Compressive SiGe <110> growth and structure of MOSFET devices
