A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abuts...http://www.google.fr/patents/US20040227187?utm_source=gb-gplus-shareBrevet US20040227187 - Integrated semiconductor device and method to make same
Integrated semiconductor device and method to make same
Numéro de demande: 10/778,953 Numéro de publication: US 2004/0227187 A1 Date de dépôt: 13 févr. 2004 Brevet délivré: US7304336 ( Date de délivrance 4 déc. 2007)
