A cell of a semiconductor device includes a substrate portion formed to include a plurality of diffusion regions, including at least one p-type diffusion region and at least one n-type diffusion region separated from each other by one or more non-active regions. The cell includes a gate electrode level...http://www.google.fr/patents/US20100096671?utm_source=gb-gplus-shareBrevet US20100096671 - Cell of Semiconductor Device Having Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors
Cell of Semiconductor Device Having Gate Electrode Conductive Structures ...
