A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming...http://www.google.fr/patents/US20080032508?utm_source=gb-gplus-shareBrevet US20080032508 - Method and Material For Forming A Double Exposure Lithography Pattern
Method and Material For Forming A Double Exposure Lithography Pattern
Numéro de demande: 11/563,805 Numéro de publication: US 2008/0032508 A1 Date de dépôt: 28 nov. 2006 Brevet délivré: US7759253 ( Date de délivrance 20 juil. 2010)
