An improved structure and process of fabricating a programmable and erasable read only memory device wherein a thick oxide region is formed on the surface of a semiconductor substrate. The thick oxide region is removed forming a depression in the surface. Impurity ions are implanted into the depression...http://www.google.fr/patents/US5424233?utm_source=gb-gplus-shareBrevet US5424233 - Method of making electrically programmable and erasable memory device with a depression
Method of making electrically programmable and erasable memory device with a ...
