The sizes of crystal masses are made to be a uniform in a crystalline silicon film obtained by a thermal crystallization method in which a metal element is used. An amorphous silicon film to be crystallized is doped with a metal element that accelerates crystallization, and then irradiated with laser...http://www.google.fr/patents/US20020197778?utm_source=gb-gplus-shareBrevet US20020197778 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
Numéro de demande: 10/141,451 Numéro de publication: US 2002/0197778 A1 Date de dépôt: 8 mai 2002 Brevet délivré: US7211476 ( Date de délivrance 1 mai 2007)
