A method for etching an oxide-nitride-oxide (ONO) layer fabricated on a semiconductor wafer, the ONO layer including a lower oxide layer, a nitride layer located over the lower oxide layer, and an upper oxide layer located over the nitride layer. The method includes the steps of removing the upper oxide...http://www.google.fr/patents/US6583066?utm_source=gb-gplus-shareBrevet US6583066 - Methods for fabricating a semiconductor chip having CMOS devices and fieldless array
Methods for fabricating a semiconductor chip having CMOS devices and ...
