In a semiconductor island structure with passive side isolation, a method and structure for reducing corner breakdown where a device conductor crosses the edge of the island. The decrease in the field strength at the island edge between the conductor and the adjacent conducting region may be achieved...http://www.google.fr/patents/US5665634?utm_source=gb-gplus-shareBrevet US5665634 - Method of increasing maximum terminal voltage of a semiconductor device
Method of increasing maximum terminal voltage of a semiconductor device
