A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid ramping anneal ("RRA") technique with a ramping rate of 50.degree. C./second at a hold temperature of 650.degree. C. for a holding time...http://www.google.fr/patents/US6326315?utm_source=gb-gplus-shareBrevet US6326315 - Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same
Low temperature rapid ramping anneal method for fabricating layered ...
