The present invention is directed to a method of forming an FeRAM integrated circuit, which includes performing a capacitor stack etch to define the FeRAM capacitor. The method comprises etching a PZT ferroelectric layer with a high temperature BCl3 etch which provides substantial selectivity with respect...http://www.google.fr/patents/US20030143853?utm_source=gb-gplus-shareBrevet US20030143853 - FeRAM capacitor stack etch
