A circuit device that includes a first transistor having a first metal gate electrode overlying a first gate dielectric on a first area of a semiconductor substrate. The first gate electrode has a work function corresponding to the work function of one of P-type silicon and N-type silicon. The circuit...http://www.google.fr/patents/US20020096724?utm_source=gb-gplus-shareBrevet US20020096724 - Complementary metal gate electrode technology
Numéro de demande: 09/517,705 Numéro de publication: US 2002/0096724 A1 Date de dépôt: 2 mars 2000 Brevet délivré: US7187044 ( Date de délivrance 6 mars 2007)
