According to one aspect, a CMOS device includes a PMOS transistor and an NMOS transistor, where each transistor includes a source, a drain, a channel region between the source and the drain, and a gate separated from the channel region by a gate insulator. The gate of the PMOS transistor includes a metallic...http://www.google.fr/patents/US20040140513?utm_source=gb-gplus-shareBrevet US20040140513 - Atomic layer deposition of CMOS gates with variable work functions
Atomic layer deposition of CMOS gates with variable work functions
