Disclosed herein is a semiconductor device having a multilayer interconnection structure, which is provided with a plurality of via holes having constant diameters. Patterns of a first interconnection layer are provided on a semiconductor substrate. An interlayer insulating film is provided over the...http://www.google.fr/patents/US5510653?utm_source=gb-gplus-shareBrevet US5510653 - Semiconductor device including silicon ladder resin layer
Semiconductor device including silicon ladder resin layer
