The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a depth, forming a...http://www.google.fr/patents/US7538392?utm_source=gb-gplus-shareBrevet US7538392 - Pseudo SOI substrate and associated semiconductor devices
Pseudo SOI substrate and associated semiconductor devices
