A new switching element and a circuit device and the like using the same element are provided, which comprises semiconductor in which a channel region is formed at an interface with an insulating film, first and second terminals S, D, which are located in corresponding manner to both ends of the channel...http://www.google.fr/patents/US6320220?utm_source=gb-gplus-shareBrevet US6320220 - Quantum tunneling effect device and semiconductor composite substrate
Quantum tunneling effect device and semiconductor composite substrate
