On a surface of a semiconductor substrate within a device forming region, a MOS transistor including a gate electrode, gate oxide film and source.cndot.drain is formed. An insulating layer is formed on the surface of the semiconductor substrate. In an opening of the insulating layer above the source.cndot.drain,...http://www.google.fr/patents/US5945716?utm_source=gb-gplus-shareBrevet US5945716 - Semiconductor wafer and device structure
