Disclosed is a manufacturing method to fabricate Heterojunction Bipolar Transistors (HBTs) that enables self-alignment of emitter and base metal contact layers with precise sub-micron spacing using a dielectric-assisted metal lift-off process. Such an HBT process relies on the formation of an "H-shaped"...http://www.google.fr/patents/US20020155670?utm_source=gb-gplus-shareBrevet US20020155670 - Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
Method and apparatus for a self-aligned heterojunction bipolar transistor ...
Numéro de demande: 09/813,293 Numéro de publication: US 2002/0155670 A1 Date de dépôt: 20 mars 2001 Brevet délivré: US6541346 ( Date de délivrance 1 avr. 2003)
