A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the...http://www.google.fr/patents/US7605062?utm_source=gb-gplus-shareBrevet US7605062 - Doped nanoparticle-based semiconductor junction
