A method of fabrication of L-shaped spacers in a semiconductor device. A gate structure is provided over a substrate. We form a first dielectric layer over the gate dielectric layer and the substrate. Next, a second dielectric layer is formed over the first dielectric layer. Then, we form a third dielectric...http://www.google.fr/patents/US6664156?utm_source=gb-gplus-shareBrevet US6664156 - Method for forming L-shaped spacers with precise width control
Method for forming L-shaped spacers with precise width control
