An integrated circuit includes an insulated-gate field effect transistor and a protection device coupled to either the source or drain of the transistor. The protection device includes a gate-controlled diode having a breakdown voltage that is less than the breakdown voltage of the drain of the field...http://www.google.fr/patents/US4115709?utm_source=gb-gplus-shareBrevet US4115709 - Gate controlled diode protection for drain of IGFET
Gate controlled diode protection for drain of IGFET
