The present invention relates to a semiconductor device that includes a semiconductor substrate (10) having source/drain diffusion regions (14) formed therein and control gates (20) formed thereon, with grooves (18) being formed on the surface of the semiconductor substrate (10) and being located below...http://www.google.fr/patents/US7977189?utm_source=gb-gplus-shareBrevet US7977189 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
