Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT. By treating the gate dielectric layer prior to depositing the active channel material, the threshold voltage may be improved....http://www.google.fr/patents/US8101949?utm_source=gb-gplus-shareBrevet US8101949 - Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
Treatment of gate dielectric for making high performance metal oxide and ...
